Transistors 2SB1462J Manuals


This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1462J
Silicon PNP epitaxial planar type
1.60+0.05
Unit: mm
–0.03
±
0.05
For general amplification
0.12+0.03
–0.01
1.00±0.05
0.80
Complementary to 2SD2216J
3
+0.05 –0.03
±
0.05
0.85
1.60
(0.375)

■ Features
1
2

0.27±0.02
High forward current transfer ratio hFE
(0.80)
(0.50)(0.50)
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
+0.05 –0.03

0 to 0.02
0.70
■ Absolute Maximum Ratings  Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V

CBO
60
V
0.10 max.
1: Base
Collector-emitter voltage (Base open)
V

CEO
50
V
2: Emitter
Emitter-base voltage (Collector open)
V

3: Collector
EBO
7
V
EIAJ: SC-89
Collector current
I

C
100
mA
SSMini3-F1 Package
Peak collector current
I

CP
200
mA
Marking Symbol: A
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
T

stg
55 to +125
°C
■ Electrical Characteristics  Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−60
V
Collector-emitter voltage (Base open)
VCEO
IC = −100 µA, IB = 0
−50
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = −20 V, IE = 0
− 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = −10 V, IE = 0
−100
µA
Forward current transfer ratio
hFE
VCE = −10 V, IC = −2 mA
160
460

Collector-emitter saturation voltage *1
VCE(sat)
IC = −100 mA, IB = −10 mA
− 0.3
− 0.5
V
Transition frequency
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
2.7
pF
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
SJC00087CED
1


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