Transistors 2SA2084 Manuals


This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA2084
Silicon PNP epitaxial planar type
For general amplification
Unit: mm
0.40+0.10
–0.05
0.16+0.10
–0.06
■ Features
3
• High collector-emitter voltage (Base open) VCEO

+0.25 –0.05
+0.2 –0.3
Mini type package, allowing downsizing of the equipment and
2.8
±
0.2
1.50
automatic insertion through the tape packing

0.4
1
2

(0.95) (0.95)
Absolute Maximum Ratings  Ta = 25°C
(0.65)
1.9±0.1
2.90+0.20
–0.05
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
−300
V
10˚
CBO
Collector-emitter voltage (Base open)
V

CEO
300
V
+0.2 –0.1
+0.3 –0.1
Emitter-base voltage (Collector open)
V

EBO
5
V
1.1
1.1
1: Base
Collector current
I

C
70
mA
2: Emitter
Peak collector current
I
−100
mA
0 to 0.1
CP
3: Collector
EIAJ: SC-59
Collector power dissipation
PC
200
mW
Mini3-G1 Package
Junction temperature
Tj
150
°C
Marking Symbol: 7N
Storage temperature
T

stg
55 to +150
°C
■ Electrical Characteristics  Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = −100 µA, IB = 0
−300
V
Emitter-base voltage (Collector open)
VEBO
IE = −1 µA, , IC = 0
−5
V
Forward current transfer ratio *
hFE
VCE = −10 V, IC = −5 mA
30
150

Collector-emitter saturation voltage
VCE(sat)
IC = −10 mA, IB = −1 mA
− 0.6
V
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
7
pF
(Common base, input open circuited)
Transition frequency
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz
50
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
hFE
30 to 100
60 to 150
Publication date: January 2003
SJC00286AED
1


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