CY7C1568V18 Manuals



CY7C1566V18, CY7C1577V18
CY7C1568V18, CY7C1570V18

72-Mbit DDR-II+ SRAM 2-Word Burst
Architecture (2.5 Cycle Read Latency)
Features
Functional Description
■ 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)
The CY7C1566V18, CY7C1577V18, CY7C1568V18, and
CY7C1570V18 are 1.8V Synchronous Pipelined SRAMs
■ 400 MHz clock for high bandwidth
equipped with DDR-II+ architecture. The DDR-II+ consists of an
■ 2-word burst for reducing address bus frequency 
SRAM core with advanced synchronous peripheral circuitry.
Addresses for read and write are latched on alternate rising
■ Double Data Rate (DDR) interfaces 
edges of the input (K) clock. Write data is registered on the rising
(data transferred at 800 MHz) at 400 MHz 
edges of both K and K. Read data is driven on the rising edges
■ Available in 2.5 clock cycle latency 
of K and K. Each address location is associated with two 8-bit
words (CY7C1566V18), 9-bit words (CY7C1577V18), 18-bit
■ Two input clocks (K and K) for precise DDR timing
words (CY7C1568V18), or 36-bit words (CY7C1570V18) that
❐ SRAM uses rising edges only
burst sequentially into or out of the device. 
■ Echo clocks (CQ and CQ) simplify data capture in high-speed 
Asynchronous inputs include an output impedance matching
systems
input (ZQ). Synchronous data outputs (Q, sharing the same
physical pins as the data inputs, D) are tightly matched to the two
■ Data valid pin (QVLD) to indicate valid data on the output
output echo clocks CQ/CQ, eliminating the need for separately
capturing data from each individual DDR SRAM in the system
■ Synchronous internally self-timed writes
design. 
■ Core V
[1]
DD = 1.8V ± 0.1V; IO VDDQ = 1.4V to VDD 
All synchronous inputs pass through input registers controlled by
■ HSTL inputs and variable drive HSTL output buffers
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
■ Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
conducted with on-chip synchronous self-timed write circuitry.
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Delay Lock Loop (DLL) for accurate data placement
Configurations
With Read Cycle Latency of 2.5 cycles:
CY7C1566V18 – 8M x 8
CY7C1577V18 – 8M x 9
CY7C1568V18 – 4M x 18
CY7C1570V18 – 2M x 36
Selection Guide
Description
400 MHz
375 MHz
333 MHz
300 MHz
Unit
Maximum Operating Frequency 
400
375
333
300
MHz
Maximum Operating Current 
x8
1400
1300
1200
1100
mA
x9
1400
1300
1200
1100
x18
1400
1300
1200
1100
x36
1400
1300
1200
1100
Note
1. The QDR consortium specification for VDDQ is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting VDDQ 
= 1.4V to VDD.
Cypress Semiconductor Corporation

198 Champion Court

San Jose, CA 95134-1709

408-943-2600
Document Number: 001-06551 Rev. *E
 Revised March 11, 2008
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